RF POWER FIELD EFFECT TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19030/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with f r e quencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and www.datasheet4u.com multicarrier amplifier applications...
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