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C2258

2SC2258

Description

Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1 3.8±0.3 11.0±0.5 • High collector-emitter voltage (Base open) VCEO 3.05±0.1 • High transition frequency fT • TO-126B package which requires no insulation plate for installation to the...


Panasonic

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