2SK4108
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4108
Switching
Regulator Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 0.
21Ω (typ.
)
z High forward transfer admittance : |Yfs| = 14 S (typ.
)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
z Enhancement mode : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note ...