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K4110

Toshiba
Part Number K4110
Manufacturer Toshiba
Description 2SK4110
Published Jul 8, 2014
Detailed Description 2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4110 Switching Regulator Applications •...
Datasheet PDF File K4110 PDF File

K4110
K4110

Overview
2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4110 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.
9 Ω (typ.
) High forward transfer admittance: |Yfs| = 5.
0 S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 6 24 40 345 6 4 150 -55 to 150 A Unit V V V Pulse (t = 1 ms) (Note 1) JEDEC W mJ A mJ °C °C ― SC-67 2-10R1B Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEITA TOSHIBA Weight: 1.
9 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/curren...


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