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K4107

Toshiba Semiconductor
Part Number K4107
Manufacturer Toshiba Semiconductor
Description 2SK4107
Published Feb 4, 2014
Detailed Description 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4107 ○ Switching Regulator Application...
Datasheet PDF File K4107 PDF File

K4107
K4107

Overview
2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4107 ○ Switching Regulator Applications Unit: mm • Low drain−source ON resistance : RDS (ON) = 0.
33 Ω (typ.
) • High forward transfer admittance : |Yfs| = 8.
5 S (typ.
) • Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note ...


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