com
SMD Type
MOS Field Effect
Transistor 2SK3295
TO-263
Features
4.
5 V drive available Low on-state resistance RDS(on)1 = 18 mÙ MAX.
(VGS = 10 V, ID = 18 A)
+ 0 .
2 8 .
7 -0 .
2 + 0 .
1 1 .
2 7 -0 .
1
Transistors IC
Unit: mm
+0.
1 1.
27-0.
1 +0.
2 4.
57-0.
2
Low gate charge QG = 16 nC TYP.
(ID = 35 A, VDD = 16 V, VGS = 10 V) Built-in gate protection diode
+0.
1 1.
27-0.
1
0.
1max
+0.
1 0.
81-0.
1
2.
54
+0.
2 -0.
2 +0.
1 5.
08-0.
1
+ 0 .
2 2 .
5 4 -0 .
2
Surface mount device available
+ 0 .
2 5 .
2 8 -0 .
2
+ 0 .
2 1 5 .
2 5 -0 .
2
2.
54
+0.
2 0.
4-0.
2
Absolute Maximum Ratings Ta = 25
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(pulse) * Total Power Dissip...