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2SK2334(L), 2SK2334(S)
Silicon N-Channel MOS FET
November 1996 Application
High speed power switching
Features
• • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching
regulator, DC-DC converter Avalanche Ratings
Outline
DPAK-2 4 4 1 1 D G 1.
Gate 2.
Drain 3.
Source 4.
Drain S
2
3
2 3
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2SK2334(L), 2SK2334(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage tempera...