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K2341

NEC
Part Number K2341
Manufacturer NEC
Description 2SK2341
Published Feb 18, 2014
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK23...
Datasheet PDF File K2341 PDF File

K2341
K2341

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2341 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS (in millimeters) 10.
0 ± 0.
3 4.
5 ± 0.
2 2.
7 ± 0.
2 FEATURES φ3.
2 ± 0.
2 • • • Low On-state Resistance RDS(on) = 0.
26 Ω MAX.
(VGS = 10 V, ID = 6.
0 A) 3 ± 0.
1 1 2 3 4 ± 0.
2 High Avalanche Capability Ratings Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) VDSS VGSS ID (DC) ID (pulse)* 250 ± 30 ± 11 ± 44 35 2.
0 –55 to +150 150 11 320 V V A A W W °C °C A mJ 1 2 3 0.
7 ± 0.
1 2.
54 TYP.
13.
5 MIN.
0.
65 ± 0.
1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Total Power Dissipation (TC = 25 °C) PT1 Total Power Dissipation (Ta = 25 °C) PT2 Storage Temperature Channel Temperature Single Avalanche Current Single Avalanche Energy *PW ≤ 10 µs, Duty Cycle ≤ 1 % **Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 1.
3 ± 0.
2 1.
5 ± 0.
2 2.
54 TYP.
12.
0 ± 0.
2 LOW Ciss Ciss = 1090 pF TYP.
15.
0 ± 0.
3 2.
5 ± 0.
1 Tstg Tch IAS** EAS** 1.
Gate 2.
Drain 3.
Source MP-45F(SIOLATED TO-220) Drain (D) The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Source (S) Gate (G) Body diode Document No.
TC-2511 (O.
D.
No.
TC–8070) Date Published January 1995 P Printed in Japan © 1995 Free Datasheet http://www.
Datasheet-PDF.
com/ 2SK2341 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain to Source On-state Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Dio...


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