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K2334

Hitachi
Part Number K2334
Manufacturer Hitachi
Description Silicon N-Channel MOS FET
Published Aug 6, 2009
Detailed Description www.DataSheet4U.com 2SK2334(L), 2SK2334(S) Silicon N-Channel MOS FET November 1996 Application High speed power switch...
Datasheet PDF File K2334 PDF File

K2334
K2334

Overview
www.
DataSheet4U.
com 2SK2334(L), 2SK2334(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche Ratings Outline DPAK-2 4 4 1 1 D G 1.
Gate 2.
Drain 3.
Source 4.
Drain S 2 3 2 3 www.
DataSheet4U.
com 2SK2334(L), 2SK2334(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1.
PW≤10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25 °C 3.
Value at Tch = 25 °C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)* IDR IAP* 3 1 Ratings 60 ±20 20 80 20 20 Unit V V A A A A mJ W °C °C EAR* Tch 3 34 2 Pch* 30 150 –55 to +150 Tstg 2 www.
DataSheet4U.
com 2SK2334(L), 2SK2334(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS IGSS VGS(off) Min 60 ±20 — — 1.
0 — — Forward transfer admittance Input capacitance |yfs| Ciss 9 — Typ — — — — — 0.
04 0.
055 15 980 Max — — ±10 100 2.
25 0.
055 0.
07 — — Unit V V µA µA V Ω Ω S pF Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A 1 VGS = 10 V* ID = 10 A 1 VGS = 4 V* ID = 10 A 1 VDS = 10 V* VDS = 10 V VGS = 0 f = 1 MHz Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state RDS(on) resistance Output capacitance Reverse transfer capacitance Turn-on delay time Coss Crss td(on) — — — 440 135 14 — — — pF pF ns ID = 10 A VGS = 10 V RL = 3 Ω Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1.
Pulse Test tr td(off) tf ...


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