SMD Type HEXFET Power MOSFET KRF7379 IC IC Features Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V @ Ta = 25 Continuous Drain Current, VGS @ 10V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 VGS dv/dt TJ, TSTG R JA Symbol VDS ID ID IDM N-Channel 30 5.
8 4.
6 46 2.
5 0.
02 20 5.
0 P-Channel -30 -4.
3 -3.
4 -34 Unit V A @Ta= 25 PD W W/ V -5.
0 V/ns -55 to + 150 50 /W *1 Repetitive...

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