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KRF7325

Guangdong Kexin Industrial
Part Number KRF7325
Manufacturer Guangdong Kexin Industrial
Description HEXFET Power MOSFET
Published Aug 20, 2009
Detailed Description SMD Type HEXFET Power MOSFET KRF7325 IC IC Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Lo...
Datasheet PDF File KRF7325 PDF File

KRF7325
KRF7325


Overview
SMD Type HEXFET Power MOSFET KRF7325 IC IC Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.
8mm) Available in Tape & Reel 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -4.
5V @ Ta = 25 Continuous Drain Current, VGS @ -4.
5V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation *2 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Junction-to-Drain Lead Maximum Junction-to-Ambient *2 VGS TJ, TSTG R R JL JA Symbol VDS ID ID IDM Rating -12 -7.
8 -6.
2 -39 2.
0 1.
3 16 8.
0 -55 to + 150 20 62.
5 Unit V A @Ta= 25 @Ta = 70 PD PD W W W/ V /W /W *1 Repetitive rating; pulse width limited by max.
junction temperature.
*2 When mounted on 1 inch square copper board.
www.
kexin.
com.
cn 1 SMD Type KRF7325 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = -250 A TJ ID = -1mA,Reference to 25 VGS = -4.
5V, ID = -7.
8A*1 Min -12 Typ Max Unit V 0.
007 24 33 49 -0.
40 17 -1.
0 -25 -100 100 22 5.
0 4.
7 9.
4 9.
8 240 180 33 7.
5 7.
0 -0.
90 V/ Static Drain-to-Source On-Resistance RDS(on) VGS = -2.
5V, ID = -6.
2A*1 VGS = -1.
8V, ID = -3.
9A*1 m Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 400 s; duty cycle 2%.
Body Diode) VGS(th) gfs IDSS VDS = VGS, ID = -250 A VDS = -10V, ID = -7.
8A*1 VDS = -9.
6V, VGS = 0V VDS = -9.
6V, VGS = 0V, TJ ...


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