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KRF7343

Guangdong Kexin Industrial
Part Number KRF7343
Manufacturer Guangdong Kexin Industrial
Description HEXFET Power MOSFET
Published Aug 20, 2009
Detailed Description SMD Type HEXFET Power MOSFET KRF7343 IC IC Features Generation V Technology Ultra Low On-Resistance Dual N and P Chann...
Datasheet PDF File KRF7343 PDF File

KRF7343
KRF7343

Overview
SMD Type HEXFET Power MOSFET KRF7343 IC IC Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current,VGS@10V , Ta = 25 Continuous Drain Current ,VGS@10V , Ta = 70 Pulsed Drain Current *1 Power Dissipation Power Dissipation Gate-to-Source Voltage Single Pulse Avalanche Energy *3 Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *5 @Ta= 25 @Ta= 70 *5 *5 VGS EAS IAR EAR dv/dt TJ, TSTG R JA Symbol VDS ID ID IDM PD N-Channel 55 4.
7 3.
8 38 2.
0 1.
3 20 72 4.
7 0.
20 5.
0 P-Channel -55 -3.
4 -2.
7 -27 Unit V A W V 114 -3.
4 mJ A mJ -5.
0 V/ns -55 to + 150 62.
5 /W *1 Repetitive rating; pulse width limited by max.
junction temperature.
*2 N-Channel ISD P-Channel ISD 4.
7A, di/dt -3.
4A, di/dt 220A/ -150A/ s, VDD s, VDD V(BR)DSS, TJ V(BR)DSS, TJ 150 150 *3 N-Channel Starting TJ = 25 , L = 6.
5mH RG = 25 , IAS = 4.
7A.
P-Channel Starting TJ = 25 , L = 20mH RG = 25 , IAS = -3.
4A.
*5 Surface mounted on FR-4 board, t *4 Pulse width 300 s; duty cycle 10sec.
2%.
www.
kexin.
com.
cn 1 SMD Type KRF7343 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS = 10V, ID = 4.
7A*1 VGS = 4.
5V, ID = 3.
8A*1 VGS = -10V, ID = -3.
4A*1 VGS = -4.
5V, ID = -2.
7A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS = 10V, ID = 4.
5A*1 VDS = -10V, ID = -3.
5A*1 VDS = 55V, VGS = 0V VDS = -55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 55 VDS = -55V, VGS = 0V, TJ = 55 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel ID = -3.
1A,VDS = -44V,VGS = -10V N-Channel VDD = 28V,ID = 1.
0A,RG = 6.
0 RD=16 P-Channel VDD = -28V,ID = ...


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