com
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
2SC1971
DESCRIPTION ·High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.
5V ·High Reliability
APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage VALUE 35
UNIT V
Collector-Emitter Voltage RBE= ∞ Emitter-Base Voltage Collector Current
Collector Power Dissipation @TC=25℃ PC
w w
s c s i .
w
17 4 2 12.
5 1.
5 150 -55~150
V
V
n c .
i m e
A
W Collector Power Dissipation @Ta=25℃
Tj Tstg
Junction Temperature Storage Temperature Range
℃ ℃
THERMAL CHARACTER...