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2SC1906

INCHANGE
Part Number 2SC1906
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 28, 2020
Detailed Description isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC1906 DESCRIPTION ·Low Noise ·High Gain Bandwidth Product ·100%...
Datasheet PDF File 2SC1906 PDF File

2SC1906
2SC1906

Overview
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC1906 DESCRIPTION ·Low Noise ·High Gain Bandwidth Product ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF amplifier,mixer and local oscillator.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 19 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 50 mA IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -50 mA 0.
3 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC1906 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 30 V V(B...


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