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2SC1905

INCHANGE
Part Number 2SC1905
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 28, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1905 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(B...
Datasheet PDF File 2SC1905 PDF File

2SC1905
2SC1905

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1905 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 300(V)(Min.
) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7.
5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
2 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1905 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 50...


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