GT60M324
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Channel IGBT
GT60M324
Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT
Unit: mm
• FRD included between emitter and collector
• Enhancement mode type
• High speed IGBT : tf = 0.
11μs (typ.
) (IC = 60A) FRD : trr = 0.
8μs (typ.
) (di/dt = −20 A/μs)
• Low saturation voltage: VCE (sat) =1.
70V (typ.
) (IC = 60A) • High Junction temperature : Tj = 175℃ (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage Gate-emitter voltage
Collector current
Diode forward current
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperat...