isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector Current:: IC= 4A ·Low Collector Saturation Voltage
: VCE(sat)= 1.
0V(Max)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1334 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
6
A
40
W
150
℃
Tstg
Storage Te...