Part Number
|
FLK027WG |
Manufacturer
|
Eudyna Devices |
Description
|
Ku Band Power GaAs FET |
Published
|
Nov 22, 2009 |
Detailed Description
|
FLK027WG
X, Ku Band Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Ty...
|
Datasheet
|
FLK027WG
|
Overview
FLK027WG
X, Ku Band Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 24.
0dBm(Typ.
) High Gain: G1dB = 7.
0dB(Typ.
) High PAE: ηadd = 32%(Typ.
) Proven Reliability Hermetic Metal/Ceramic Package
DESCRIPTION
The FLK027WG is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Ra...
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