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FLK027XP

Eudyna Devices
Part Number FLK027XP
Manufacturer Eudyna Devices
Description GaAs FET & HEMT Chips
Published Nov 22, 2009
Detailed Description FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0d...
Datasheet PDF File FLK027XP PDF File

FLK027XP
FLK027XP

Overview
FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.
0dBm(Typ.
) High Gain: G1dB = 7.
0dB(Typ.
) High PAE: ηadd = 32%(Typ.
) Proven Reliability Source Gate Drain DESCRIPTION The FLK027XP, and FLK027XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Source Rating 15 -5 Unit V V W °C °C Tc = 25°C 1.
88 -65 to +175 175 Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (VDS) should not exceed 10 volts.
2.
The forward and reverse gate currents should not exceed 2.
2 and -...


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