DatasheetsPDF.com

FLK027WG

Eudyna Devices
Part Number FLK027WG
Manufacturer Eudyna Devices
Description Ku Band Power GaAs FET
Published Nov 22, 2009
Detailed Description FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Ty...
Datasheet PDF File FLK027WG PDF File

FLK027WG
FLK027WG

Overview
FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.
0dBm(Typ.
) High Gain: G1dB = 7.
0dB(Typ.
) High PAE: ηadd = 32%(Typ.
) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 1.
875 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (VDS) should not exceed 10 volts.
2.
The forward and reverse gate currents should not exceed 2.
2 and -0.
1 mA respectively with gate resistance of 2000Ω.
3.
The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item www.
DataSheet4U.
com Symbol IDSS gm Vp VGSO P1dB G1dB ηadd P1dB G1dB ηadd Rth Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 65mA VDS = 5V, IDS = 5mA IGS = -5µA VDS = 10V, IDS = 0.
6 IDSS (Typ.
), f = 14.
5 GHz Min.
-1.
0 -5 23.
0 6.
0 - Limit Typ.
Max.
100 50 -2.
0 24.
0 7.
0 32 24 8 34 40 150 -3.
5 80 Unit mA mS V V dBm dB % dBm dB % °C/W Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Power-added Efficiency Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Power-added Efficiency Thermal Resistance CASE STYLE: WG VDS = 10V, IDS = 0.
6 IDSS (Typ.
), f = 12 GHz Channel to Case - G.
C.
P.
: Gain Compression Point Edition 1.
1 July 1999 1 FLK027WG X, Ku Band Power GaAs FET POWER DERATING CURVE 2 Total Power Dissipation (W) 100 Drain Current...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)