PBHV8115Z
150 V, 1 A
NPN high-voltage low VCEsat (BISS)
transistor
Rev.
02 — 9 December 2008 Product data sheet
1.
Product profile
1.
1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS)
transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9115Z.
1.
2 Features
I I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Medium power SMD plastic package
1.
3 Applications
I I I I I I
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