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PBHV8118T

NXP
Part Number PBHV8118T
Manufacturer NXP
Description 1 A NPN high-voltage low VCEsat(BISS) transistor
Published Jun 29, 2010
Detailed Description www.DataSheet4U.com PBHV8118T 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 — 7 May 2010 Product dat...
Datasheet PDF File PBHV8118T PDF File

PBHV8118T
PBHV8118T

Overview
www.
DataSheet4U.
com PBHV8118T 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev.
01 — 7 May 2010 Product data sheet 1.
Product profile 1.
1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
1.
2 Features and benefits „ „ „ „ „ „ High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Small SMD plastic package 1.
3 Applications „ „ „ „ „ LED driver for LED chain module LCD backlighting Automotive power management Hook switch for wired telecom Switch Mode Power Supply (SMPS) 1.
4 Quick reference data Table 1.
Symbol VCEO IC hFE [1] Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = 10 V; IC = 50 mA [1] Conditions open base Min 100 Typ 250 Max 180 1 - Unit V A Pulse test: tp ≤ 300 μs; δ ≤ 0.
02.
www.
DataSheet4U.
com NXP Semiconductors PBHV8118T 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 2.
Pinning information Table 2.
Pin 1 2 3 Pinning Description base emitter collector 1 2 2 sym021 Simplified outline 3 Graphic symbol 3 1 3.
Ordering information Table 3.
Ordering information Package Name PBHV8118T Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4.
Marking Table 4.
Marking codes Marking code[1] LZ* Type number PBHV8118T [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBHV8118T All information provided in this document is subject to legal disclaimers.
© NXP B.
V.
2010.
All rights reserved.
Product data sheet Rev.
01 — 7 May 2010 2 of 13 www.
DataSheet4U.
com NXP Semiconductors PBHV8118T 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 5.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VCBO VCEO VEB...


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