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PBHV8115T

NXP Semiconductors
Part Number PBHV8115T
Manufacturer NXP Semiconductors
Description 1A NPN high-voltage low VCEsat (BISS) transistor
Published Nov 29, 2009
Detailed Description PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 02 — 9 December 2008 Product data sheet 1. Prod...
Datasheet PDF File PBHV8115T PDF File

PBHV8115T
PBHV8115T

Overview
PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev.
02 — 9 December 2008 Product data sheet 1.
Product profile 1.
1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9115T.
1.
2 Features I I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Small SMD plastic package 1.
3 Applications I I I I I I www.
DataSheet4U.
com LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch Mode Power Supply (SMPS) 1.
4 Quick reference data Table 1.
Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = 10 V; IC = 50 mA Conditions open base Min 100 Typ 250 Max 150 1 Unit V A NXP Semiconductors PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 2.
Pinning information Table 2.
Pin 1 2 3 Pinning Description base emitter collector 1 2 2 sym021 Simplified outline 3 Graphic symbol 3 1 3.
Ordering information Table 3.
Ordering information Package Name PBHV8115T Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4.
Marking Table 4.
Marking codes Marking code[1] W6* Type number PBHV8115T [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China www.
DataSheet4U.
com PBHV8115T_2 © NXP B.
V.
2008.
All rights reserved.
Product data sheet Rev.
02 — 9 December 2008 2 of 12 NXP Semiconductors PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 5.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tamb Tstg [1] Parameter collector-base voltage collector...


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