N-Channel MOSFET
2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM • Application for Ultra-compact ECM 0.2±0.05 1.2±0.05 0.3±0.05 3 0.8±0.05 Unit: mm 1.2±0.05 0.8±0.1 Absolute Maximum Ratings (Ta=25°C) Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature rang...
Toshiba Semiconductor