DatasheetsPDF.com

2SK3582TK

Toshiba Semiconductor
Part Number 2SK3582TK
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jan 14, 2010
Detailed Description 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM • Application for Ultra-com...
Datasheet PDF File 2SK3582TK PDF File

2SK3582TK
2SK3582TK

Overview
2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM • Application for Ultra-compact ECM 0.
22±0.
05 1.
2±0.
05 0.
8±0.
05 0.
32±0.
05 3 2 0.
1±0.
05 Unit: mm 0.
45 0.
45 1.
4±0.
05 Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA °C °C 0.
395±0.
03 mW 0.
9±0.
1 Absolute Maximum Ratings (Ta=25°C) 1 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
TESM3 1.
Drain 2.
Source 3.
Gate 2-1R1A JEDEC JEITA TOSHIBA Weight: 2.
2mg (typ.
) IDSS CLASSIFICATION A-Rank 80 to 200 µA B-Rank 170 to 300µA www.
DataSheet4U.
com Marking Type Name Equivalent Circuit D 5 IDSS Classification Symbol A :A -Rank B :B-Rank G S 1 2007-11-01 2SK3582TK Electrical Characteristics (Ta=25°C) Characteristic Drain Current Drain Current Gate-Source Cut-off Voltage Forward transfer admittance Gate-Drain Voltage Input capacitance Voltage Gain Delta Voltage Gain Delta Voltage Gain Noise Voltage Total Harmonic Distortion Time Output Stability Symbol IDSS ID VDS = 2 V, VGS = 0 VDD = 2 V, RL= 2kΩ,Cg = 10pF Test Condition Min 80 ⎯ -0.
1 0.
55 -20 ⎯ -5.
0 ⎯ ⎯ ⎯ ⎯ ⎯ Typ.
⎯ ⎯ ⎯ 1.
0 ⎯ 3.
6 0 0 -1.
0 ⎯ 1.
0 100 Max 300 340 -0.
65 ⎯ ⎯ ⎯ +2.
0 -1.
0 -3.
0 50 ⎯ 200 Unit µA µA V mS V pF dB dB dB mV % ms VGS(OFF) VDS = 2 V, ID = 1μA |Yfs| VDS = 2 V,VGS = 0V V(BR)GDO IG=-10μA Ciss Gv DGv(f) DGv(V) VN T...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)