FDS4435BZ P-Channel PowerTrench® MOSFET FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.
8A, 20m: Features „ Max rDS(on) = 20m: at VGS = -10V, ID = -8.
8A „ Max rDS(on) = 35m: at VGS = -4.
5V, ID = -6.
7A „ Extended VGSS range (-25V) for battery applications „ HBM ESD protection level of ±3.
8KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ Termination is Lead-free and RoHS compliant April 2009 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power...

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