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TC2181
REV4_20070504
Low Noise and High Dynamic Range Packaged GaAs FETs
FEATURES
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5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz 18.
5 dBm Typical Power at 12 GHz 13 dB Typical Linear Power Gain at 12 GHz Breakdown Voltage : BVDGO ≥ 9V Lg = 0.
25 µm, Wg = 160 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2181 is a high performance field effect
transistor housed in a ceramic micro-x package with TC1101 PHEMT Chip.
It has very low noise figure, high associated gain and high dynamic range that makes this device...