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TC2182

Transcom
Part Number TC2182
Manufacturer Transcom
Description Low Noise Ceramic Packaged PHEMT GaAs FETs
Published Mar 14, 2010
Detailed Description www.DataSheet4U.com TC2182 REV4_20070504 Low Noise Ceramic Packaged PHEMT GaAs FETs FEATURES • • • • • • • 0.5 dB Typi...
Datasheet PDF File TC2182 PDF File

TC2182
TC2182

Overview
www.
DataSheet4U.
com TC2182 REV4_20070504 Low Noise Ceramic Packaged PHEMT GaAs FETs FEATURES • • • • • • • 0.
5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.
25 µm, Wg = 160 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package PHOTO ENLARGEMENT DESCRIPTION The TC2182 is a high performance field effect transistor housed in a ceramic micro-x package with TC1102 PHEMT Chip.
It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers.
All devices are 100 % DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol NF Ga IDSS gm VP BVDGO Rth CONDITIONS Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID...


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