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TC2181

Transcom
Part Number TC2181
Manufacturer Transcom
Description Low Noise and High Dynamic Range Packaged GaAs FETs
Published Mar 14, 2010
Detailed Description www.DataSheet4U.com TC2181 REV4_20070504 Low Noise and High Dynamic Range Packaged GaAs FETs FEATURES ! ! ! ! ! ! ! ! ...
Datasheet PDF File TC2181 PDF File

TC2181
TC2181

Overview
www.
DataSheet4U.
com TC2181 REV4_20070504 Low Noise and High Dynamic Range Packaged GaAs FETs FEATURES ! ! ! ! ! ! ! ! ! ! 0.
5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz 18.
5 dBm Typical Power at 12 GHz 13 dB Typical Linear Power Gain at 12 GHz Breakdown Voltage : BVDGO ≥ 9V Lg = 0.
25 µm, Wg = 160 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package PHOTO ENLARGEMENT DESCRIPTION The TC2181 is a high performance field effect transistor housed in a ceramic micro-x package with TC1101 PHEMT Chip.
It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers.
All devices are 100 % DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol NF Ga P1dB GL IDSS gm VP Rth CONDITIONS Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz = 12GHz = 12 GHz VDS = 6 V, IDS = 25 mA 10 17.
5 11 Associate...


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