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TC2182
REV4_20070504
Low Noise Ceramic Packaged PHEMT GaAs FETs
FEATURES
• • • • • • • 0.
5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.
25 µm, Wg = 160 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2182 is a high performance field effect
transistor housed in a ceramic micro-x package with TC1102 PHEMT Chip.
It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers.
All devices are 100 % DC tested to assure consistent quality.
ELECTRICAL SPEC...