PBSS5160U
60 V, 1 A
PNP low VCEsat (BISS)
transistor
Rev.
04 — 2 October 2008
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Product data sheet
1.
Product profile
1.
1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160U.
1.
2 Features
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
1.
3 Applications
I I I I I High voltage DC-to-DC conversion High voltage MOSFET ga...