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PBSS5160DS

NXP Semiconductors
Part Number PBSS5160DS
Manufacturer NXP Semiconductors
Description 60V 1A PNP/PNP low VCEsat (BISS) transistor
Published Mar 25, 2010
Detailed Description PBSS5160DS Rev. 03 — 9 October 2008 www.DataSheet4U.com 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Product data sh...
Datasheet PDF File PBSS5160DS PDF File

PBSS5160DS
PBSS5160DS

Overview
PBSS5160DS Rev.
03 — 9 October 2008 www.
DataSheet4U.
com 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Product data sheet 1.
Product profile 1.
1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160DS.
1.
2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.
3 Applications I Dual low power switches (e.
g.
motors, fans) I Automotive applications 1.
4 Quick reference data Table 1.
Symbol VCEO IC ICM RCEsat [1] [2] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = −1 A; IB = −100 mA [2] Conditions open base [...


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