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PBSS5160T

GME
Part Number PBSS5160T
Manufacturer GME
Description PNP Transistor
Published Jul 30, 2017
Detailed Description Production specification PNP Low VCEsat(BISS) Transistor FEATURES z Low collector-emitter saturation voltage VCEsat z ...
Datasheet PDF File PBSS5160T PDF File

PBSS5160T
PBSS5160T

Overview
Production specification PNP Low VCEsat(BISS) Transistor FEATURES z Low collector-emitter saturation voltage VCEsat z High collector current capability IC and ICM z High efficiency, reduces heat generation z Reduces printed-circuit board area required Pb Lead-free PBSS5160T APPLICATIONS z Major application segments z Power management z Peripheral driver ORDERING INFORMATION Type No.
Marking PBSS5160T U6 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous ICM peak collector current (t = 1 ms or limited by Tj(max)) IB base current (DC) IBM peak base current (tp ≤ 300 ms; δ≤ 0.
02) Value -80 -60 -5 -0.
9（note 1） -1（note 2） -2 -300 -1 Units V V V A A mA A PC Tstg，Tamb Collector Dissipation Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; note 2 Tamb ≤ 25 °C; notes 1 and 3 Storage and operating ambi...


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