ESMT PSRAM Features • Wide voltage range: 2.
7V–3.
6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — Typical active current: 14 mA @ f = fmax (For 55-ns) —Typical active current: 8 mA @ f = fmax (For 70-ns) • Ultra low standby power • Automatic power-down when deselected • CMOS for optimum speed/power www.
DataSheet4U.
com M24L216128SA 2-Mbit (128K x 16) Pseudo Static RAM when both Byte High Enable and Byte Low Enable are disabled ( BHE , BLE HIGH), or during a write operation ( CE LOW and WE LOW).
Writing to the device is accomplished by asserting Chip Enable ( CE LOW) and Write Enable ( WE ) input LOW.
If Byte Low Enable ( BLE ) is LOW, then ...

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