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M24L216128DA

Elite Semiconductor Memory Technology
Part Number M24L216128DA
Manufacturer Elite Semiconductor Memory Technology
Description 2-Mbit (128K x 16) Pseudo Static RAM
Published Jul 8, 2010
Detailed Description ESMT PSRAM Features ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typ...
Datasheet PDF File M24L216128DA PDF File

M24L216128DA
M24L216128DA

Overview
ESMT PSRAM Features ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.
7V to 3.
6V • Typical active current: 1 mA @ f = 1 MHz • Low standby power • Automatic power-down when deselected www.
DataSheet4U.
com M24L216128DA 2-Mbit (128K x 16) Pseudo Static RAM Functional Description The M24L216128DA is a high-performance CMOS pseudo static RAM (PSRAM) organized as 128K words by 16 bits that supports an asynchronous memory interface.
This device features advanced circuit design to provide ultra-low active current.
This is ideal for portable applications such as cellular telephones.
The device can be put into standby mode, reducing power consumption dramatically when deselected ( CE1 HIGH, CE2 LOW or both BHE and BLE are HIGH).
The input/output pins(I/O0 through I/O15) are placed in a high-impedance state when the chip is deselected ( CE1 HIGH, CE2 LOW) or OE is deasserted HIGH), or during a write operation (Chip Enabled and Write Enable WE LOW).
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