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M24L216128SA

Elite Semiconductor Memory Technology
Part Number M24L216128SA
Manufacturer Elite Semiconductor Memory Technology
Description 2-Mbit (128K x 16) Pseudo Static RAM
Published Jul 8, 2010
Detailed Description ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical activ...
Datasheet PDF File M24L216128SA PDF File

M24L216128SA
M24L216128SA

Overview
ESMT PSRAM Features • Wide voltage range: 2.
7V–3.
6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — Typical active current: 14 mA @ f = fmax (For 55-ns) —Typical active current: 8 mA @ f = fmax (For 70-ns) • Ultra low standby power • Automatic power-down when deselected • CMOS for optimum speed/power www.
DataSheet4U.
com M24L216128SA 2-Mbit (128K x 16) Pseudo Static RAM when both Byte High Enable and Byte Low Enable are disabled ( BHE , BLE HIGH), or during a write operation ( CE LOW and WE LOW).
Writing to the device is accomplished by asserting Chip Enable ( CE LOW) and Write Enable ( WE ) input LOW.
If Byte Low Enable ( BLE ) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16).
If Byte High Enable ( BHE ) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16).
Reading from the device is accomplished by asserting Chip Enable ( CE LOW) and Output Enable ( OE ) LOW while forcing the Write Enable ( WE ) HIGH.
If Byte Low Enable ( BLE ) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7.
If Byte High Enable( BHE ) is LOW, then data from memory will appear on I/O8 to I/O15.
Refer to the truth table for a complete description of read and write modes.
Functional Description The M24L216128SA is a high-performance CMOS Pseudo Static RAM organized as 128K words by 16 bits that supports an asynchronous memory interface.
This device features advanced circuit design to provide ultra-low active current.
This is ideal for portable applications such as cellular telephones.
The device can be put into standby mode when deselected ( CE HIGH or both BHE and BLE are HIGH).
The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when the chip is deselected ( CE HIGH), or when the outputs are disabled ( OE HIGH), or...


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