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2SK4023
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (π−MOS V)
2SK4023
Switching
Regulator, DC/DC Converter
6.5±0.2
Unit: mm
5.2±0.2 1.5±0.2 0.6 MAX.
4.1±0.2
5.7
• • • • •
4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.
0 Ω (typ.
) High forward transfer admittance: |Yfs| = 0.
8 S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 450 V) Enhancement mode: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA)
1.6
5.5±0.2
0.9
1.1±0.2
0.6 MAX
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg
Rating 450 450 ±30 1 2 20 122 1 2 150 −55~150...