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2SK4026
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (π-MOS V)
2SK4026
Switching
Regulator Applications
6.5±0.2 5.2±0.2 1.5±0.2
Unit: mm
0.6 MAX.
Features
• • • • Low drain-source ON-resistance: RDS (ON) = 6.
4 Ω(typ.
) High forward transfer admittance: |Yfs| = 0.
85 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDSS = 600 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
0.9
1.6
5.5±0.2
1.1±0.2
4.1±0.2
5.7
0.6 MAX
2.3
2.3 2.3±0.2 0.6±0.15 0.6±0.15
Absolute Maximum Ratings (Ta = 25°C)
1 2 3
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1)
Symbol V...