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2SK4013
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSⅣ)
2SK4013
Switching
Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 1.
35 Ω (typ.
) High forward transfer admittance: |Yfs| = 5.
0 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 640 V) Enhancement-model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 800 800 ±30 6 18 45 317 6 4.
5 150 −55 to 150 Unit V V V A W mJ A mJ °C °C 1: Gate 2: ...