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SMD Type
NPN Silicon AF
Transistors KC817(BC817)
SOT-23
+0.
1 2.
9-0.
1 +0.
1 0.
4-0.
1
Transistors
Unit: mm
+0.
1 2.
4-0.
1
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
+0.
1 1.
3-0.
1
1
+0.
1 0.
95-0.
1 +0.
1 1.
9-0.
1
2
0.
55
0.
4
3
+0.
05 0.
1-0.
01
+0.
1 0.
97-0.
1
1.
Base 2.
Emitter 3.
collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating 50 45 5 800 310 150 -65 to +150 Unit V V V mA mW
Electrical Characteristic...