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DataSheet.
in PD - 94573 SMPS MOSFET Applications l High frequency DC-DC converters l UPS and Motor Control Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current l Typical RDS(on) = 12mΩ l HEXFET® Power MOSFET IRF8010S IRF8010L ID 80A‡ 15mΩ VDSS 100V RDS(on) max D2Pak IRF8010S TO-262 IRF8010L Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM Max.
80 57 320 260 1.
8 ± 20 i Units A W W/°C V V/ns °C c PD @TC =...

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