Part Number
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WFP2N60 |
Manufacturer
|
WINSEMI SEMICONDUCTOR |
Description
|
Silicon N-Channel MOSFET |
Published
|
Nov 25, 2010 |
Detailed Description
|
WFP2N60
Silicon N-Channel MOSFET
Features
■ 2A,650V(Type.), RDS(on)(Max 5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 15n...
|
Datasheet
|
WFP2N60
|
Overview
WFP2N60
Silicon N-Channel MOSFET
Features
■ 2A,650V(Type.
), RDS(on)(Max 5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 15nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply.
G D S
TO220
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Dr...
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