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WFP2N60

WINSEMI SEMICONDUCTOR
Part Number WFP2N60
Manufacturer WINSEMI SEMICONDUCTOR
Description Silicon N-Channel MOSFET
Published Nov 25, 2010
Detailed Description WFP2N60 Silicon N-Channel MOSFET Features ■ 2A,650V(Type.), RDS(on)(Max 5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 15n...
Datasheet PDF File WFP2N60 PDF File

WFP2N60
WFP2N60

Overview
WFP2N60 Silicon N-Channel MOSFET Features ■ 2A,650V(Type.
), RDS(on)(Max 5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 15nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply.
G D S TO220 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Dr...


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