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WFP2N60B

WINSEMI SEMICONDUCTOR
Part Number WFP2N60B
Manufacturer WINSEMI SEMICONDUCTOR
Description Silicon N-Channel MOSFET
Published Nov 25, 2010
Detailed Description www.DataSheet.in B WFP2N60 FP2N60B Silicon N-Channel MOSFET Features ■ 2A,600V, RDS(on)(Max 4.7Ω)@VGS=10V ■ Ultra-low ...
Datasheet PDF File WFP2N60B PDF File

WFP2N60B
WFP2N60B

Overview
www.
DataSheet.
in B WFP2N60 FP2N60B Silicon N-Channel MOSFET Features ■ 2A,600V, RDS(on)(Max 4.
7Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.
0nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply.
G D S TO220 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for sold...


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