Part Number
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WFP2N60B |
Manufacturer
|
WINSEMI SEMICONDUCTOR |
Description
|
Silicon N-Channel MOSFET |
Published
|
Nov 25, 2010 |
Detailed Description
|
www.DataSheet.in
B WFP2N60 FP2N60B
Silicon N-Channel MOSFET
Features
■ 2A,600V, RDS(on)(Max 4.7Ω)@VGS=10V ■ Ultra-low ...
|
Datasheet
|
WFP2N60B
|
Overview
www.
DataSheet.
in
B WFP2N60 FP2N60B
Silicon N-Channel MOSFET
Features
■ 2A,600V, RDS(on)(Max 4.
7Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.
0nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply.
G D S
TO220
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Curren...
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