Power
Transistors
2SB1172, 2SB1172A
Silicon
PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SD1742, 2SD742A ■ Features
• High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment
7.
0±0.
3 3.
0±0.
2 2.
0±0.
2 3.
5±0.
2
Unit: mm
0˚ to 0.
15˚
2.
5±0.
2
12.
6±0.
3 7.
2±0.
3
1.
1±0.
1
Parameter Collector-base voltage (Emitter open) 2SB1172 2SB1172A
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C
Rating −60 −80 −60 −80 −5 −3 −5 15 1.
3 150 −55 to +150
Unit V
1.
0±0.
2
0.
75±0.
1 ...