2SB1203

2SB1201 : Ordering number : EN2112C 2SB1201/2SD1801 SANYO Semiconductors DATA SHEET 2SB1201/2SD1801 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller Specifications ( ): 2SB1201 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse).

2SB1201 : Ordering number : EN2112C 2SB1201/2SD1801 Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller Specifications ( ): 2SB1201 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Conditi.

2SB1201 : SMD Type High-Current Switching Applications 2SB1201 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-to-emitter saturation voltage. Fast switching speed. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -60 -50 -6 -2 -4.

2SB1201 : ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -4 A 15 W 0.8 W 150 ℃ Tstg Storage Tem.

2SB1202 : www.DataSheet.co.kr Ordering number:EN2113B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1202/2SD1802 High-Current Switching Applications Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit:mm 2045B [2SB1202/2SD1802] Features · Adoption of FBET, MBIT processes. · Large currrent capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1202/2SD1802-used sets smaller. 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SB1202/2SD1802] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO pr.

2SB1202 : 2SB1202/2SD1802 Bipolar Transistor (–)50 V, (–)3 A, Low VCE(sat) (PNP)NPN Single TP/TP−FA Features • Adoption of FBET and MBIT Processes • Large Current Capacitance and Wide ASO • Low Collector to Emitter Saturation Voltage • Fast Switching Speed • Small and Slim Package Making it Easy to Make 2SB1202/2SD1802−used Sets Smaller • These Devices are Pb−Free and are RoHS Compliant Applications • Voltage Regulators, Relay Drivers, Lamp Drivers, Electrical Equipment ABSOLUTE MAXIMUM RATINGS at TA = 25°C Parameter Symbol Conditions Ratings Unit Collector to Base Voltage VCBO (−)60 V Collector to Emitter Voltage VCEO (−)50 V Emitter to Base Voltage VEBO (−)6 V Collector Current I.

2SB1202 : Production specification PNP Epitaxial Planar Silicon Transistors FEATURES z Adoption of FBET,MBIT processes. Pb z Large current capacity and wide ASO. Lead-free z Low collector-to-emitter saturation voltage. z Fast switching speed. z Small and slim package making it easy to Make 2SB1202-used sets smaller. APPLICATIONS z High-Current Switching Applications. z Voltage regulators,relay drivers,lamp drivers, Electrical equipment. TO-251 2SB1202 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collecto.

2SB1202 : ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -6 A 15 W 1.0 W 150 ℃ Tstg Storage Tem.

2SB1202 : The UTC 2SB1202 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment.  FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed 1 SOT-89 1 TO-251 1 TO-252 1 TO-92 1 TO-126C  ORDERING INFORMATION Order Number Lead Free Halogen Free 2SB1202L-x-AB3-R 2SB1202G-x-AB3-R 2SB1202L-x-TM3-T 2SB1202G-x-TM3-T 2SB1202L-x-TN3-R 2SB1202G-x-TN3-R 2SB1202L-x-T6C-K 2SB1202G-x-T6C-K 2SB1202L-x-T92-B 2SB1202G-x-T92-B 2SB1202L-x-T92-K 2SB1202G-x-T92-K Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 TO-251 TO-252 TO-126C TO-92 TO-92 Pin Assign.

2SB1203 : Ordering number : EN2085C 2SB1203/2SD1803 Bipolar Transistor (–)50V, (–)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • http://onsemi.com Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features • • • • High current and high fT Low collector-to-emitter saturation voltage • Fast switching speed Excellent linearity of hFE Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Specifications ( ): 2SB1203 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP .

2SB1203 : TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.  / Features ，，fT ，，。 Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time.  / Applications ，，。 Relay drivers, high-speed inverters, general high-current switching applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：Base PIN 2,4：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range Q 70～140 R 100～200 S 140～280 T 200～400 http://www.fsbrec.com 1/6 2SB1203 Rev.E May.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage.

2SB1203 : ·High current and high fT ·Low collector-to-emitter saturation voltage ·Excellent linearity of hFE ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -.

2SB1203 : SMD Type High-Current Switching Applications 2SB1203 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-to-emitter saturation voltage. High current and high fT. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 Fast switching speed. 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation TC = 25 Jumction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEB.

2SB1204 : Ordering number:ENN2086B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1204/2SD1804 High-Current Switching Applications Applications Æ Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Package Dimensions unit:mm 2045B [2SB1204/2SD1804] 1.5 Features Æ Low collector-to-emitter saturation voltage. Æ High current and high fT. Æ Excellent linearity of hFE. Æ Fast switching time. Æ Small and slim package making it easy to make 2SB1204/2SD1804-applied sets smaller. 6.5 5.0 4 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 0.6 1 2 3 0.5 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SB1204/2SD1804].

2SB1204 : TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.  / Features ，，fT ，，。 Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time.  / Applications ，，。 Relay drivers, high-speed inverters, general high-current switching applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：Base PIN 2,4：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range Q 70～140 R 100～200 S 140～280 T 200～400 http://www.fsbrec.com 1/6 2SB1204 Rev.E May.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage.

2SB1204 : ·High current and high fT ·Low collector-to-emitter saturation voltage ·Excellent linearity of hFE ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,high speed inverters,converters and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -.