Power
Transistor (-60V, -3A)
2SB1184 / 2SB1243
Features
1) Low VCE(sat).
VCE(sat) = -0.
5V (Typ.
) (IC/IB = -2A / -0.
2A)
2) Complements the 2SD1760 / 2SD1864.
Dimensions (Unit : mm)
2SB1184
6.
5±0.
2
5.
1
+0.
2 −0.
1
C0.
5
2.
3
+0.
2 −0.
1
0.
5±0.
1
2SB1243
6.
8±0.
2
2.
5±0.
2
1.
5±0.
3
4.
4±0.
2
1.
0 0.
9
1.
5 2.
5
9.
5±0.
5
+0.
3 −0.
1
0.
9
5.
5
Structure Epitaxial planar type
PNP silicon
transistor
0.
75 0.
9
0.
65±0.
1
2.
3±0.
2 2.
3±0.
2
0.
55±0.
1 1.
0±0.
2
(1) (2) (3)
ROHM : CPT3 EIAJ : SC-63
(1) Base (2) Collector (3) Emitter
0.
65Max.
14.
5±0.
5
0.
5±0.
1 (1) (2) (3)
2.
54 2.
54
ROHM : ATV
1.
05
0.
45±0.
1
(1) Emitter (2) Collector (3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Lim...