Power
Transistors
2SB1253
Silicon
PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD1893
Unit: mm
15.
0±0.
3 11.
0±0.
2 5.
0±0.
2 3.
2
s Features
q q q q
16.
2±0.
5 12.
5 3.
5 Solder Dip
Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): –2.
5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –130 –110 –5 –10 –6 50 3 150 –55 to +150 Unit V V V A A W ˚C ˚C
0.
7
21.
0±0.
5 15.
0±0.
2
φ3.
2±0.
1
2.
0±0.
2
2.
0±0.
1 0.
6±0.
2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collecto...