TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process)
2SC1959
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications
2SC1959
Unit: mm
· Excellent hFE linearity: hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA · 1 watt amplifier applications.
· Complementary to 2SA562TM.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
35 30 5 500 100 500 150 -55~150
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Cha...